Product Summary

The 2SA940 is a Plastic-Encapsulated Transistor.

Parametrics

2SA940 absolute maximum ratings: (1)Collector-base breakdown voltage V(BR)CBO Ic=-100μA, IE=0: -150 V; (2)Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0: -150 V; (3)Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0: -5 V; (4)Collector cut-off current ICBO VCB=-120V, IE=0: -10 μA; (5)Emitter cut-off current IEBO VEB=-5V, IC=0: -10 μA; (6)DC current gain hFE(1) VCE=-10V, IC=-500mA: 40 to 140; (7)Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA: -1.5 V; (8)Base-emitter voltage VBE VCE=-10V, IC=-500mA: -0.65 to -0.85 V; (9)Transition frequency fT VCE=-10V, IC=-500mA: 4 MHz; (10)Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz: 55 pF.

Features

2SA940 features: (1)Power dissipation, PCM : 1.5 W (Tamb=25℃); (2)Collector current, ICM : -1.5 A; (3)Collector-base voltage, V(BR)CBO : -150 V; (4)Operating and storage junction temperature range, TJ, Tstg: -55℃ to +150℃.

Diagrams

2SA940 block diagram

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