Product Summary

The 2SD1710 is a Silicon NPN Power Transistor. It is suitable for Ultrahigh-definition CRT display and Horizontal deflection output applications.

Parametrics

2SD1710 absolute maximum ratings: (1)Collector-base voltage: 1500 V at Open emitter; (2)Collector-emitter voltage: 800 V at Open base; (3)Emitter-base voltage: 6 V at Open collector; (4)Collector current: 5 A; (5)Collector power dissipation: 50 W TC=25℃; (6)Junction temperature: 150 ℃; (7)Storage temperature: -55~150 ℃.

Features

2SD1710 features: (1)With TO-3PML package; (2)High voltage; high speed; (3)High reliability.

Diagrams

2SD1710 block diagram

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2SD1710
2SD1710

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2SD1710C
2SD1710C

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Data Sheet

Negotiable