Product Summary

The 45DB011B is a 2.7-volt only, serial interface Flash memory suitable for in-system reprogramming. Its 1,081,344 bits of memory are organized as 512 pages of 264 bytes each. In addition to the main memory, the 45DB011B also contains one SRAM data buffer of 264 bytes. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a serial interface to sequentially access its data.

Parametrics

45DB011B absolute maximum ratings: (1)Temperature Under Bias: -55 to +125℃; (2)Storage Temperature: -65 to +150℃; (3)All Input Voltages(including NC Pins) with Respect to Ground: -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V.

Features

45DB011B features: (1)Single 2.7V - 3.6V Supply; (2)Serial Interface Architecture; (3)Page Program Operation: Single Cycle Reprogram (Erase and Program); 512 Pages (264 Bytes/Page) Main Memory; (4)Optional Page and Block Erase Operations; (5)One ; (6)Internal Program and Control Timer; (7)Fast Page Program Time – 7 ms Typical; (8)120 μs Typical Page to Buffer Transfer Time ; (9)Low-Power Dissipation: 4 mA Active Read Current Typical; 2 μA CMOS Standby Current Typical; (10)13 MHz Max Clock Frequency; (11)Hardware Data Protection Feature; (12)Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3; (13)CMOS and TTL Compatible Inputs and Outputs; (14)Commercial and Industrial Temperature Ranges.

Diagrams

45DB011B block diagram

45DB081B
45DB081B
Other

Data Sheet
Negotiable