(China (Mainland))
Product Summary
The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band.
Parametrics
PTFA082201E absolute maximum ratings: (1)Error Vector Magnitude: 1.3 %; (2)Modulation Spectrum @ 400 kHz: 61 dBc; (3)Modulation Spectrum @ 600 kHz: 75 dBc; (4)Drain Efficiency: 31%.
Features
PTFA082201E features: (1)Broadband internal matching; (2)Typical EDGE performance- Average output power = 4.0 W; (3)Typical CW performance-Output power at dB = 13 W; (4)Integrated ESD protection: Human Body; (5)Model, Class 1 (minimum); (6)Excellent thermal stability; (7)Low HCI drift.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 PTFA082201E V1 |
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IC FET RF LDMOS 220W H-36260-2 |
Data Sheet |
Negotiable |
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PTFA082201E V4 |
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IC FET RF LDMOS 220W H-36260-2 |
Data Sheet |
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 |
PTFA082201EV1 |
Infineon Technologies |
Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 |
Data Sheet |
Negotiable |
|
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|
PTFA082201E V4 R250 |
|
IC FET RF LDMOS 220W H-36260-2 |
Data Sheet |
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