Product Summary

The 17N80C3 is a cool MOS power transistor.

Parametrics

17N80C3 absolute maximum ratings: (1)Continuous drain current ID: 17A at TC = 25 ℃; 11A at TC = 100 ℃; (2)Pulsed drain current, tp limited by Tjmax ID puls: 51 A; (3)Avalanche energy, single pulse ID=3.4A, VDD=50V EAS: 670 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID=17A, VDD=50V, EAR: 0.5 mJ; (5)Avalanche current, repetitive tAR limited by Tjmax IAR: 17 A; (6)Gate source voltage VGS: ±20 V; (7)Gate source voltage AC (f >1Hz) VGS: 30 V; (8)Power dissipation, TC = 25℃ Ptot: 208 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.

Features

17N80C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)Ultra low effective capacitances; (7)Improved transconductance; (8)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).

Diagrams

17N80C3 diagram