(China (Mainland))
Product Summary
The 2SK3569 is a silicon N-channel MOS type field effect transistor.
Parametrics
2SK3569 absolute maximum ratings: (1)Drain-source voltage VDSS: 600 V; (2)Drain-gate voltage (RGS = 20 kΩ) VDGR: 600 V; (3)Gate-source voltage VGSS: ±30 V; (4)Drain power dissipation (Tc = 25℃) PD: 45 W; (5)Single pulse avalanche energy EAS: 363 mJ; (6)Avalanche current IAR: 10 A; (7)Repetitive avalanche energy EAR: 4.5 mJ; (8)Channel temperature Tch: 150 ℃; (9)Storage temperature range Tstg: -55~150 ℃.
Features
2SK3569 features: (1)Low drain-source ON resistance: RDS (ON) = 0.54 (typ.); (2)High forward transfer admittance: |Yfs| = 8.5S (typ.); (3)Low leakage current: IDSS = 100 A (VDS = 600 V); (4)Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 2SK3569 |
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MOSFET N-CH 600V 10A TO-220SIS |
Data Sheet |
Negotiable |
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2SK3569(Q) |
Toshiba |
MOSFET N-Ch 600V 10A Rdson 0.75 Ohm |
Data Sheet |
Negotiable |
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2SK3569(Q,M) |
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MOSFET N-CH 600V 10A TO-220SIS |
Data Sheet |
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