(China (Mainland))
Product Summary
The 2SB817 is an NPN silicon power transistor. And the2SB817 transistor is designed for use in general purpose power amplifier application.
Parametrics
2SB817 maximum ratings: (1) Colletor-Emitter Voltage VCEO: 140V; (2) Collector-Base Voltage VCBO: 160V; (3) Emitter-Base Voltage VEBO: 6.0V; (4) Collector Current-Continuous-Peak IC: 12A, ICM: 15A; (5) Total Power Dissipation@Tc=25°C, Debrate above 25°C PD: 100W, 0.8W/°C; (6) Operating and storage junction temperature TJ, TSTG: -55 to +150°C.
Features
2SB817 features: (1) Collector-Emitter Voltage VCEO=140V (Min); (2) DC Current Gain hFE=60-200@Ic=1.0A; (3) Complement to 2SD1047.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SB817 |
Other |
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Data Sheet |
Negotiable |
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2SB817E |
Other |
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Data Sheet |
Negotiable |
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2SB817P |
Other |
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Data Sheet |
Negotiable |
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