(China (Mainland))
Product Summary
The 5N2307 is a Silicon N Channel MOS FET high speed power switching.
Parametrics
5N2307 absolute maximum ratings: (1) Drain to source voltage VDSS: 230V; (2) Gate to source voltage VGSS: ±30V; (3) Drain current ID: 35A; (4) Drain peak current ID (pulse) : 140A; (5) Body-drain diode reverse drain current IDR: 35A; (6) Body-drain diode reverse drain peak current IDR (pulse) : 140A; (7) Avalanche current IAP: 18A; (8) Channel dissipation θch-c: 60W; (9) Channel to case thermal impedance θch-c: 2.08°C/W; (10) Channel temperature Tch: 150°C; (11) Storage temperature Tstg: -50 to +150°C.
Features
5N2307 features: (1) Low on-resistance; (2) Low leakage current; (3) High speed switching.
Diagrams
