(China (Mainland))
Product Summary
The AP4435GM is an Advanced Power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package of the AP4435GM is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Parametrics
AP4435GM absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current3, ID@TA=25℃: -9A; (4)Continuous Drain Current3, ID@TA=70℃: -7.3A; (5)Pulsed Drain Current1, IDM: -50A; (6)Total Power Dissipation, PD@TA=25℃: 2.5W; (7)Linear Derating Factor: 0.02W/℃; (8)Storage Temperature Range, -55 to 150℃; (9)Operating Junction Temperature Range: -55 to 150℃.
Features
AP4435GM features: (1)Simple Drive Requirement; (2)Low On-resistance; (3)Fast Switching Characteristic.
Diagrams
