Product Summary

The AP88N30W is an N-channel enhancement mode power MOSFET. It provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device.

Parametrics

AP88N30W absolute maximum ratings: (1)VDS Drain-Source Voltage: 300V; (2)VGS Gate-Source Voltage: ±30V; (3)ID@TC=25℃ Continuous Drain Current, VGS @ 10V: 88A; (4)IDM Pulsed Drain Current: 270A; (5)IDR Body-Drain Diode Reverse Drain Current: 88A; (6)IDR(PULSE) Body-Drain Diode Reverse Drain Peak Current: 176A; (7)PD@TC=25℃ Total Power Dissipation: 150W; (8)Linear Derating Factor: 1.2W/℃; (9)IAR Avalanche Current: 30A; (10)EAR Single Pulse Avalanche Energy: 45mJ; (11)TSTG Storage Temperature Range: -55 to 150℃; (12)TJ Operating Junction Temperature Range: -55 to 150℃.

Features

AP88N30W features: (1)Simple Drive Requirement; (2)Lower On-resistance; (3)High Speed Switching.

Diagrams

AP88N30W diagram

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