Product Summary

The BLF245 is a Silicon N-channel enhancement mode vertical D-MOS transistor which is designed for large signal amplifier applications in the VHF frequency range. The BLF245 is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Parametrics

BLF245 absolute maximum ratings: (1)drain-source voltage: 65 V at VGS = 0; (2)gate-source voltage: ±20 V at VDS = 0; (3)drain current (DC): 6 A; (4)total power dissipation: 68 W at Tmb ≤ 25 ℃ ; (5)storage temperature: -65 to 150 ℃; (6)junction temperature: 200 ℃.

Features

BLF245 features: (1)High power gain; (2)Low noise figure; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.

Diagrams

BLF245 simplified outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF245
BLF245
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-20: $27.00
20-25: $24.30
25-50: $21.60
50-100: $19.44
BLF245,112
BLF245,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 30W VHF
Data Sheet
0-1: $22.26
1-25: $20.77
25-100: $19.28
100-250: $18.91
BLF245B,112
BLF245B,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 30W VHF P-P
Data Sheet
0-1: $42.27
1-25: $39.83
25-100: $36.98
BLF245B
BLF245B
Other

Data Sheet
Negotiable