(China (Mainland))
Product Summary
The EDE2116ABSE-8G-E is a 2G bits DDR2 SDRAM.
Parametrics
Absolute maximum ratings: (1)Power supply voltage, VDD: -1.0 to +2.3V; (2)Power supply voltage for output, VDDQ: -0.5 to +2.3V; (3)Input voltage, VIN: -0.5 to +2.3V; (4)Output voltage, VOUT: -0.5 to +2.3V; (5)Storage temperature, Tstg: -55 to +100℃; (6)Power dissipation, PD: 1.0W; (7)Short circuit output current, IOUT: 50mA.
Features
Features: (1)Double-data-rate architecture; two data transfers per clock cycle; (2)The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture; (3)Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at; (4)the receiver; (5)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs; (6)Differential clock inputs (CK and /CK); (7)DLL aligns DQ and DQS transitions with CK transitions; (8)Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS; (9)Data mask (DM) for write data; (10)Posted /CAS by programmable additive latency for better command and data bus efficiency; (11)Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality; (12)/DQS can be disabled for single-ended Data Strobe operation.
Diagrams
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 EDE2104ABSE |
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Negotiable |
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EDE2108ABSE |
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Negotiable |
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EDE2116ABSE |
Other |
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Negotiable |
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EDE2516ABSE |
Other |
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Negotiable |
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EDE2516ABSE-GE |
Other |
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Negotiable |
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EDE2516AEBG |
Other |
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Data Sheet |
Negotiable |
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