(China (Mainland))
Product Summary
The FQA12P20 is a P-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency switching DC/DC converters.
Parametrics
FQA12P20 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -200 V; (2)ID Drain Current - Continuous (TC = 25℃): -12.6 A; Continuous (TC = 100℃): -7.9 A; (3)IDM, Drain Current - Pulsed (Note 1): -50.4 A; (4)VGSS, Gate-Source Voltage: ±30 V; (5)EAS, Single Pulsed Avalanche Energy (Note 2): 810 mJ; (6)IAR, Avalanche Current (Note 1): -12.6 A; (7)EAR, Repetitive Avalanche Energy (Note 1): 15 mJ; (8)dv/dt, Peak Diode Recovery dv/dt (Note 3): -5.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 150 W; Derate above 25℃: 1.2 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQA12P20 features: (1)-12.6A, -200V, RDS(on) = 0.47Ω@VGS = -10 V; (2)Low gate charge ( typical 31 nC); (3)Low Crss ( typical 30 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQA12P20 |
Fairchild Semiconductor |
MOSFET 200V P-Channel QFET |
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
FQA10N60C |
Fairchild Semiconductor |
MOSFET N-CH/600V/10A/QFET |
Data Sheet |
Negotiable |
|
||||||||||||
|
FQA10N80 |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
Negotiable |
|
||||||||||||
|
FQA10N80_F109 |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
Negotiable |
|
||||||||||||
|
FQA10N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch advance QFET |
Data Sheet |
Negotiable |
|
||||||||||||
|
FQA10N80C_F109 |
Fairchild Semiconductor |
MOSFET 800V N-Ch QFET Advance |
Data Sheet |
|
|
||||||||||||
|
FQA11N40 |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
|
||||||||||||
