Product Summary

The FQPF3N90 is an N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency switch mode power supply.

Parametrics

FQPF3N90 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 600 V; (2)DC collector current, TC = 25℃, IC: 41A; TC = 100℃, IC: 30A; (3)Pulsed collector current, tp limited by Tjmax ICpul s 112A; (4)Turn off safe operating area, VCE ≤ 600V, Tj ≤ 150℃: 112A; (5)Diode forward current, TC = 25℃, IF: 41A; TC = 100℃, IF: 28A; (6)Diode pulsed current, tp limited by Tjmax, IFpuls: 112A; (7)Gate-emitter voltage static, VGE: ±20V; (8)transient (tp<1μs, D<0.05), VGE: ±30V; (9)Short circuit withstand time2), VGE = 15V, VCC ≤ 600V, Tj ≤ 150℃, tSC: 10 μs; (10)Power dissipation, TC = 25℃, Ptot: 250 W; (11)Operating junction and storage temperature Tj, Tstg: -55 to +150℃; (12)Time limited operating junction temperature for t < 150h, Tj (tl): 175℃; (13)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.

Features

FQPF3N90 features: (1)2.1A, 900V, RDS(on) = 4.25 Ω@ VGS = 10 V; (2)Low gate charge ( typical 20 nC); (3)Low Crss ( typical 8.0 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQPF3N90 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQPF3N90
FQPF3N90
Fairchild Semiconductor
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Data Sheet
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Data Sheet
Negotiable