Product Summary

The HGTG30N60A4 is a MOS gated high voltage switching device. It combines the best features of MOSFETs and bipolar transistors. The HGTG30N60A4 has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. The HGTG30N60A4 is suitable for high voltage switching applications operating at high frequencies where low conduction losses are essential. The HGTG30N60A4 is designed for high frequency switch mode power supplies.

Parametrics

HGTG30N60A4 absolute maximum ratings: (1)Collector to Emitter Voltage, BVCES: 600 V; (2)Collector Current Continuous: At TC = 25℃, IC25: 75 A; At TC = 110℃, IC110: 60 A; (3)Collector Current Pulsed, ICM: 240 A; (4)Gate to Emitter Voltage Continuous, VGES: ±20 V; (5)Gate to Emitter Voltage Pulsed, VGEM: ±30 V; (6)Switching Safe Operating Area at TJ = 150℃, SSOA: 150A at 600V; (7)Power Dissipation Total at TC = 25℃, PD: 463 W; (8)Power Dissipation Derating TC > 25℃: 3.7 W/℃; (9)Operating and Storage Junction Temperature Range, TJ, TSTG: -55 to 150℃; (10)Maximum Lead Temperature for Soldering, TL: 260 ℃.

Features

HGTG30N60A4 features: (1)>100kHz Operation At 390V, 30A; (2)200kHz Operation At 390V, 18A; (3)600V Switching SOA Capability; (4)Typical Fall Time: 60ns at TJ = 125℃; (5)Low Conduction Loss.

Diagrams

HGTG30N60A4 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
HGTG30N60A4
HGTG30N60A4
Fairchild Semiconductor
IGBT Transistors 600V N-Channel IGBT SMPS Series
Data Sheet
0-1: $5.05
1-25: $4.55
25-100: $3.73
100-250: $3.44
HGTG30N60A4D
HGTG30N60A4D
Fairchild Semiconductor
IGBT Transistors 600V N-Channel IGBT SMPS Series
Data Sheet
0-1: $6.37
1-25: $5.23
25-100: $4.72
100-250: $4.34