(China (Mainland))
Product Summary
The IRFI1010 is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFI1010 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
Parametrics
IRFI1010 absolute maximum ratings: (1)Continuous Drain Current: 49A; (2)Continuous Drain Current: 35A; (3)Pulsed Drain Current: 290A; (4)Power Dissipation: 58 W; (5)Linear Derating Factor: 0.38 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 360 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (9)TJ Operating Junction, TSTG Storage Temperature Range: -55 to 175℃; (10)IAR Avalanche Current: 43 A; (11)EAR Repetitive Avalanche Energy: 5.8 mJ.
Features
IRFI1010 features: (1)Advanced Process Technology; (2)Isolated Package; (3)High Voltage Isolation = 2.5KVRMS; (4)Sink to Lead Creepage Dist. = 4.8mm; (5)Fully Avalanche Rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRFI1010N |
International Rectifier |
MOSFET N-CH 55V 49A TO220FP |
Data Sheet |
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IRFI1010NPBF |
International Rectifier |
MOSFET MOSFT 55V 44A 12mOhm 86.7nC |
Data Sheet |
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