IRFP4332

IRFP4332, HEXFET power MOSFET, TO, ±30 V, 57A, 360W, International Rectifier

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Price:: US $0.92~1.17 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
10 ~ 50 :	1.17 / Piece
51 ~ 200 :	1.00 / Piece
201 ~ 500 :	0.92 / Piece

PartNumber:: IRFP4332

Brand:: International Rectifier - IR | Pack: TO | D/C: 09+

Availability:: Supply Ability: 2/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-01-24

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Part Number:IRFP4332
US $0.92 - 1.17
Quantity:

piece

Product Summary

The IRFP4332 is a power MOSFET. It is specifically designed for Sustain; Energy recovery&pass switch applications in plasma display panels. This MOSFET IRFP4332 utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175℃ oprating junction temperature and high repetitive peak current capability.

Parametrics

IRFP4332 absolute maximum ratings: (1)VGS, Gate-to-Source Voltage: ±30 V; (2)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 57 A; (3)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 40A; (4)IDM, Pulsed Drain Current: 230A; (5)IRP @ TC = 100℃, Repetitive Peak Current: 120A; (6)PD @TC = 25℃, Power Dissipation: 360 W; (7)PD @TC = 100℃, Power Dissipation: 180W; (8)Linear Derating Factor: 2.4 W/℃; (9)TJ, TSTG, Operating Junction and Storage Temperature Range: -40 to 175℃.

Features

IRFP4332 features: (1)Advanced Process Technology; (2)Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications; (3)Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications; (4)Low QG for Fast Response; (5)High Repetitive Peak Current Capability for Reliable Operation; (6)Short Fall & Rise Times for Fast Switching; (7)175℃ Operating Junction Temperature for Improved Ruggedness; (8)Repetitive Avalanche Capability for Robustness and Reliability.