(China (Mainland))
Product Summary
The IXFK34N80 is the HiPerFET power mosfet. The applications of the IXFK34N80 include: DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, AC motor control and Temperature and lighting controls.
Parametrics
IXFK34N80 maximum ratings: (1) Tj=25°C to 150°C, VDSS: 800V; (2) Tj=25°C to 150°C; RGS=1mΩ, BDGR=800V; (3) Continuous VGS=±20V; (4) Transisent VGSM: ±30V; (5) Tc=25°C, ID25: 34A; Tc=25°C, pulse width limited by Tjim, IDM: 136A, Tc=25°C IAR: 36A; (6) TC=25°C. EAR: 64mJ, Tc=25°C, EAS: 3J; (7) Is≤IDM, di/dt≤100A/μS, VDD≤VDS , Tj≤150°C, RG=2Ω, dv/dt: 5V/ns; (8) Tc=25°C, PD: 560W.
Features
IXFK34N80 features: (1) International standard packages; (2) Low RDS (on) HDMOS process; (3) Rugged polysilicon gate cell structure; (4) Unclamped Inductive Switching (UIS) rated; (5) Low package inductance; (6) Fast intrinsic rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFK34N80 |
Ixys |
MOSFET 800V 34A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXFK 120N25 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFK 21N100F |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFK 25N80 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFK 27N80 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFK 48N60P |
Other |
|
Data Sheet |
Negotiable |
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|
IXFK100N10 |
Ixys |
MOSFET 100 Amps 100V 0.012 Ohm Rds |
Data Sheet |
Negotiable |
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