Product Summary

The K30N60HS is a High Speed IGBT.

Parametrics

K30N60HS absolute maximum ratings: (1)Collector-emitter voltage, VCE: 600 V; (2)DC collector current, TC = 25℃, IC: 41A; TC = 100℃, IC: 30A; (3)Pulsed collector current, tp limited by Tjmax ICpul s 112; (4)Turn off safe operating area, VCE ≤ 600V, Tj ≤ 150℃: 112A; (5)Diode forward current, TC = 25℃, IF: 41A; TC = 100℃, IF: 28A; (6)Diode pulsed current, tp limited by Tjmax, IFpuls: 112A; (7)Gate-emitter voltage static, VGE: ±20V; (8)transient (tp<1μs, D<0.05), VGE: ±30V; (9)Short circuit withstand time2), VGE = 15V, VCC ≤ 600V, Tj ≤ 150℃, tSC: 10 μs; (10)Power dissipation, TC = 25℃, Ptot: 250 W; (11)Operating junction and storage temperature Tj, Tstg: -55 to +150℃; (12)Time limited operating junction temperature for t < 150h, Tj (tl): 175℃; (13)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.

Features

K30N60HS features: (1)30% lower Eoff compared to previous generation; (2)Short circuit withstand time -10μs; (3)Designed for operation above 30 kHz; (4)NPT-Technology for 600V applications offers: parallel switching capability; moderate Eoff increase with temperature; very tight parameter distribution; (5)High ruggedness, temperature stable behaviour; (6)Pb-free lead plating; RoHS compliant; (7)Qualified according to JEDEC1 for target applications ; (8)Complete product spectrum and PSpice Models.

Diagrams

K30N60HS block diagram