Product Summary
The 2N6545 is a NPN silicon power transistor, which is designed for high-voltage, high-speed, power switching inductive circuits where fall time is critical.
Parametrics
Absolute maximum ratings: (1)collector-emitter voltage: 400V; (2)collector-emitter voltage: 850V; (3)collector-base voltage: 9.0 V; (4)collector current-continuous: 8.0 A; (5)collector current-peak: 16 A; (6)base current-continuous: 8.0 A; (7)emitter current-continuous: 16 A; (8)emitter current-peak: 32 A; (9)total power dissipation @ Tc=25℃: 125 W; (10)derate above 25℃: 0.714 W/℃.
Features
Features: reversed biased SOA with inductive loads switching times with inductive loads saturation voltages, leakage currents.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2N6545 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Power SW |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
2N6500 |
Other |
Data Sheet |
Negotiable |
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2N6504 Series |
Other |
Data Sheet |
Negotiable |
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2N6504G |
ON Semiconductor |
SCRs 50V 25A |
Data Sheet |
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2N6505 |
ON Semiconductor |
SCRs 100V 25A |
Data Sheet |
Negotiable |
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2N6505G |
ON Semiconductor |
SCRs 100V 25A |
Data Sheet |
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2N6505T |
ON Semiconductor |
SCRs 100V 25A |
Data Sheet |
Negotiable |
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