Product Summary
The 2SC5144 is a Silicon NPN triple diffused mesa type transistor.
Parametrics
2SC5144 absolute maximum ratings: (1)Collector-base voltage, VCBO: 1700V; (2)Collector-emitter voltage, VCEO: 600V; (3)Emitter-base voltage, VEBO: 5V; (4)Collector current, DC, IC: 20A; Pulse, ICP: 40A; (5)Base current, IB: 10A; (6)Collector power dissipation, PC: 200W; (7)Junction temperature, TJ: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.
Features
2SC5144 features: (1)High speed: tf=0.15μs(typ); (2)High voltage: VCBO=1700V; (3)Low saturation voltage: VCE(sat)=3V(max).
Diagrams
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2SC5144 |
Other |
Data Sheet |
Negotiable |
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2SC5000 |
Other |
Data Sheet |
Negotiable |
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2SC5001TLQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
Data Sheet |
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2SC5001TLR |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 20V 10A |
Data Sheet |
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2SC5002 |
Other |
Data Sheet |
Negotiable |
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2SC5003 |
Other |
Data Sheet |
Negotiable |
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2SC5004 |
Other |
Data Sheet |
Negotiable |
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