2SK2508

2SK2508, Silicon N Channel MOS Type field effect transistor, TO, 250V, 13A, 45W, Toshiba Semiconductor

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Price:: US $0.33~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
10 ~ 100 :	0.50 / Piece
101 ~ 500 :	0.42 / Piece
501 ~ 1000 :	0.33 / Piece

PartNumber:: 2SK2508

Brand:: Toshiba Semiconductor - Toshiba | Pack: TO | D/C: 09+

Availability:: Supply Ability: 2/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-01-24

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Part Number:2SK2508
US $0.33 - 0.50
Quantity:

piece

Product Summary

The 2SK2508 is a Silicon N Channel MOS Type field effect transistor.

Parametrics

2SK2508 absolute maximum ratings: (1)Drain-source voltage, VDSS: 250 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 250 V; (3)Gate-source voltage, VGSS: ±20 V; (4)Drain current, DC (Note 1), ID: 13 A; Pulse (Note 1), IDP: 52 A; (5)Drain power dissipation (Tc = 25℃), PD: 45 W; (6)Single pulse avalanche energy (Note 2), EAS 148: mJ; (7)Avalanche current, IAR: 13 A; (8)Repetitive avalanche energy (Note 3), EAR: 4.5 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55 to 150℃.

Features

2SK2508 features: (1)Low drain.source ON resistance: RDS (ON) = 0.18 Ω (typ.); (2)High forward transfer admittance: |Yfs| = 13 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 250 V); (4)Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA.