(China (Mainland))
Product Summary
The 2SK3563 is a Silicon N Channel MOS Type Field Effect Transistor.
Parametrics
2SK3563 absolute maximum ratings: (1)Drain-source voltage, VDSS: 500 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 500 V; (3)Gate-source voltage, VGSS: ±30 V; (4)Drain current Pulse (t = 1 ms), DC (Note 1), ID: 5A; (Note 1) IDP: 20A; (5)Drain power dissipation (Tc = 25℃), PD: 35 W; (6)Single pulse avalanche energy (Note 2), EAS: 180 mJ; (7)Avalanche current, IAR: 5 A; (8)Repetitive avalanche energy (Note 3), EAR: 3.5 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55 to 150℃.
Features
2SK3563 features: (1)Low drain-source ON resistance: RDS (ON) = 1.35Ω(typ.); (2)High forward transfer admittance: |Yfs| = 3.5S (typ.); (3)Low leakage current: IDSS = 100μA (VDS = 500 V); (4)Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SK3563 |
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MOSFET N-CH 500V 5A TO-220SIS |
Data Sheet |
Negotiable |
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2SK3563(Q) |
Toshiba |
MOSFET N-Ch 500V 5A Rdson 1.5 Ohm |
Data Sheet |
Negotiable |
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