Product Summary

The FQP2N90 n-channel enhancement mode power field effect transistor is produced using the propriety of Fairchild, planar stripe, DMOS technology.This advanced technoloogy of the FQP2N90 has been especially tailored to mainimize on-state resistance, provid superior switching performance, and withstand high energy pulse in the avalanche and communictation mode. The FQP2N90 is well suited for high efficiency switch mode power supply.

Parametrics

FQP2N90 absolute maximum ratings: (1) Drain-SOurc VDSS: 900V; (2) Drain Current-Continuous (Tc=25°C) : 2.2A, Continuous (Tc=100 °C) ; (3) Gate-Source Voltage: ±30V; (4) SIngle Pulsed Avalanche Energy EAS: 170mJ; (5) Avalanche Current IAR: 2.2A; (6) Repetitive Avalanche Energy: 8.5mJ; (7) Operating and storage temperature range: -55 to +150°C.

Features

FQP2N90 features; (1) 2.2A, 900V, RDS(on) =7.2Ω@VGS=10V; (2) Low gate charge (typical 12nC); (3) Low Crss (typical 5.5pF); (4) Fast switching; (5) 100% avalanche tested; (6) Improved dv/dt capability.

Diagrams

FQP2N90 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQP2N90
FQP2N90

Fairchild Semiconductor

MOSFET 900V N-Channel QFET

Data Sheet

0-1: $0.68
1-25: $0.53
25-100: $0.49
100-250: $0.42
FQP2N90_Q
FQP2N90_Q

Fairchild Semiconductor

MOSFET 900V N-Channel QFET

Data Sheet

Negotiable