FQP2N90

N-channel mosfet, 2.2A, 900V, TO

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.30~0.42 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
10 ~ 100 :	0.42 / Piece
101 ~ 500 :	0.34 / Piece
501 ~ 1000 :	0.30 / Piece

PartNumber:: FQP2N90

Brand:: Filtronic Compound Semiconductors - FCS | Pack: TO | D/C: 08+

Availability:: Supply Ability: 2/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-01-31

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Part Number:FQP2N90
US $0.30 - 0.42
Quantity:

piece

Product Summary

The FQP2N90 n-channel enhancement mode power field effect transistor is produced using the propriety of Fairchild, planar stripe, DMOS technology.This advanced technoloogy of the FQP2N90 has been especially tailored to mainimize on-state resistance, provid superior switching performance, and withstand high energy pulse in the avalanche and communictation mode. The FQP2N90 is well suited for high efficiency switch mode power supply.

Parametrics

FQP2N90 absolute maximum ratings: (1) Drain-SOurc VDSS: 900V; (2) Drain Current-Continuous (Tc=25°C) : 2.2A, Continuous (Tc=100 °C) ; (3) Gate-Source Voltage: ±30V; (4) SIngle Pulsed Avalanche Energy EAS: 170mJ; (5) Avalanche Current IAR: 2.2A; (6) Repetitive Avalanche Energy: 8.5mJ; (7) Operating and storage temperature range: -55 to +150°C.

Features

FQP2N90 features; (1) 2.2A, 900V, RDS(on) =7.2Ω@VGS=10V; (2) Low gate charge (typical 12nC); (3) Low Crss (typical 5.5pF); (4) Fast switching; (5) 100% avalanche tested; (6) Improved dv/dt capability.