(China (Mainland))
Product Summary
The HAT2028RJ is a Silicon N Channel Power MOSFET.
Parametrics
HAT2028RJ absolute maximum ratings: (1)Drain to source voltage, VDSS: 60 V; (2)Gate to source voltage, VGSS: ±20 V; (3)Drain current, ID: 4 A; (4)Drain peak current, ID (pulse): 32 A; (5)Body-drain diode reverse drain current, IDR: 4 A; (6)Avalanche current: 4 A; (7)Avalanche energy, EAR: 1.37 mJ; (8)Channel dissipation, Pch: 2 W; (9)Channel dissipation, Pch: 3 W; (10)Channel temperature, Tch: 150℃; (11)Storage temperature, Tstg: -55 to +150℃.
Features
HAT2028RJ features: (1)For Automotive Application (at Type Code "J"); (2)Low on-resistance; (3)Capable of 4 V gate drive; (4)High density mounting.
Diagrams
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 HAT2028RJ |
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Negotiable |
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HAT2016R |
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HAT2020R |
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Negotiable |
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Negotiable |
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Negotiable |
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