IRF7319

IRF7319, HEXFET Power MOSFET, SOP, 30V, 6.5A, International Rectifier

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Price:: US $0.13~0.17 / piece [Get Latest Price]

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Qty (lots)	Price/lot
10 ~ 100 :	0.17 / Piece
101 ~ 300 :	0.15 / Piece
301 ~ 1000 :	0.13 / Piece

PartNumber:: IRF7319

Brand:: International Rectifier - IR | Pack: SOP | D/C: 09+

Availability:: Supply Ability: 2/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-01-21

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Part Number:IRF7319
US $0.13 - 0.17
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Product Summary

The IRF7319 is a fifth generation HEXFET. The IRF7319 utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7319 absolute maximum ratings: (1)drain-source voltage, VDS: 30V N-channel, -30V P-channel; (2)gate-source voltage, VGS: ±20V; (3)continuous drain current, ID: 6.5A N-channel, -4.9A P-channel when TA=25℃; 5.2A N-channel, -3.9A P-channel when TA=70℃; (4)pulsed drain current, IDM: 3.0A N-channel, -3.0A P-channel; (5)continuous source current (Diode Conduction), Is: 2.5A N-channel, -2.5A P-channel; (6)maximum power dissipation, PD: 2.0W when TA=25℃; 1.3W when TA=70℃; (7)single pulse avananche energy, EAS: 82mJ N-channel, 140mJ P-channel; (8)avalanche current, IAR: 4.0A N-channel, -2.8A P-channel; (9)repetitive avalanche energy, EAR: 0.20mJ; (10)peak diode recovery dv/dt, dv/dt: 5.0V/ns N-channel, -5.0V/ns P-channel; (11)junction and storage temperature range, TJ, TSTG: -55 to +150℃.

Features

IRF7319 features: (1)generation V technology; (2)ultra low on-resistance; (3)dual N and P channel MOSFET; (4)surface mount; (5)fully avalache rated; (6)lead-free.