Product Summary

The IRG4PC50W is an insulated gate bipolar transistor. It has Lower switching losses allow more cost effective operation than power MOSFETs up to 150 kHz. The IRG4PC50W has particular benefit to single-ended converters and boost PFC topologies 150W and higher.

Parametrics

IRG4PC50W absolute maximum ratings: (1)VCES Collector-to-Emitter Breakdown Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 55 A; (3)IC @ TC = 100℃ Continuous Collector Current: 27 A; (4)ICM Pulsed Collector Current: 220 A; (5)ILM Clamped Inductive Load Current: 220 A; (6)VGE Gate-to-Emitter Voltage: ±20 V; (7)EARV Reverse Voltage Avalanche Energy: 170 mJ; (8)PD @ TC = 25℃ Maximum Power Dissipation: 200 W; (9)PD @ TC = 100℃ Maximum Power Dissipation: 78 W; (10)Operating Junction and Storage Temperature Range: -55℃ to + 150℃; (11)Soldering Temperature, for 10 seconds: 300℃.

Features

IRG4PC50W features: (1)Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications; (2)Industry-benchmark switching losses improve efficiency of all power supply topologies; (3)50% reduction of Eoff parameter; (4)Low IGBT conduction losses; (5)Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability.

Diagrams

IRG4PC50W block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRG4PC50W
IRG4PC50W
International Rectifier
IGBT WARP 600V 55A TO-247AC
Data Sheet
1-125: $2.39
IRG4PC50WPBF
IRG4PC50WPBF
International Rectifier
IGBT Transistors 600V Warp 60-150kHz
Data Sheet
0-1: $4.42
1-25: $3.02
25-100: $2.25
100-250: $2.15