IXBD4410PI

half bridge driver chipset, 1200V, 2A, DIP

Rated 5 Rating 5 | reviews | Write a review

Price:: US $3.00~3.16 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
10 ~ 50 :	3.16 / Piece
51 ~ 100 :	3.08 / Piece
101 ~ 200 :	3.00 / Piece

PartNumber:: IXBD4410PI

Brand:: IXYS Corporation - ixys | Pack: DIP | D/C: 04+

Availability:: Supply Ability: 2/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. yoyo's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-01-31

From Other Seller

Part Number:IXBD4410PI
US $3.00 - 3.16
Quantity:

piece

Product Summary

The IXBD4410PI is designed to control the gates of two Power MOSFETs or Power IGBTs. The IXBD4410PIis a full-feature chipset consisting of two 16-Pin DIP or SO devices interfaced and isolated by two small-signal ferrite pulse transformers.Applications of the IXBD4410PI include: 1- or 3-Phase Motor Controls, Switch Mode Power Supplies (SMPS) ,Uninterruptible Power Supplies
(UPS) Induction Heating and Welding Systems and Switching Amplifiers General Power Conversion Circuits.

Parametrics

IXBD4410PI absolute maximum ratings: (1) Supply Voltage VDD/VEE: -0.5 to 24V; (2) Input Voltage (INH, INL) Vin: -0.5 to VDD +0.5V; (3) Input Current (INL, INH, IM) : ±10A, Peak Reverse Output Current (OUT) I(rev) : 2A; (4) Maximum Power Dissipation (TA = 25 °C) PD : 600mW; (5) Tc=25°C (16-Pin SOIC) : 10W; (6) Operating Ambient Temperature TA: -40 to 85°C; (7) Maximum Junction Temperature Tjm: 150°C; (8) Storage Temperature Range Tstg: -55 to 150°C; (9) Lead Soldering Temperature for 10s TL: 300°C.

Features

IXBD4410PI features: (1) 1200V or greater low-to-high side isolation; (2) Drives Power Systems Operating on up to 575 V AC mains; (3) dv/dt immunity of greater than ±50V/ns; (4) Proprietary low-to-high side level translation and communication; (5) 5 V logic compatible HCMOS inputs with hysteresis; (6) 2 A peak output drive capability; (7) Logic compatible fault indicationfrom both low and high-side driver; (8) Protection from cross conduction of the half bridge.