Product Summary

The MRF150 is a RF power field-effect transistor. It is designed primarily for linear large–signal output stages up to 150 MHz frequency range.

Parametrics

MRF150 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 125 Vdc; (2)Drain–Gate Voltage VDGO: 125 Vdc; (3)Gate–Source Voltage VGS: ±40 Vdc; (4)Drain Current — Continuous ID: 16 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 300 Watts; Derate above 25℃ PD: 1.71 W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃; (7)Operating Junction Temperature TJ: 200 ℃.

Features

MRF150 features: (1)Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts; Power Gain = 17 dB (Typ); Efficiency = 45% (Typ); (2)Superior High Order IMD; (3)IMD(d3) (150 W PEP): 32 dB (Typ); (4)IMD(d11) (150 W PEP): 60 dB (Typ); (5)100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR.

Diagrams

MRF150 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF150
MRF150
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB
Data Sheet
0-1: $39.75
1-10: $35.78
10-25: $25.44
25-50: $24.65
MRF1500
MRF1500
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Data Sheet
Negotiable 
MRF15030
MRF15030
Other

Data Sheet
Negotiable 
MRF15060
MRF15060
Other

Data Sheet
Negotiable 
MRF15060S
MRF15060S
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Negotiable 
MRF1507
MRF1507
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MRF1507T1
MRF1507T1
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MRF15090
MRF15090
Other

Data Sheet
Negotiable