(China (Mainland))
Product Summary
The SD1127 is a 12.5V silicon NPN planar transistor designed for economical VHF commmumications. The transistor chip is mounted on a beryllium oxide tab to isolate the collector lead allowing a groundes emitter configuration for high gain and excellent heat dissipation.
Parametrics
SD1127 absolute maximum ratings: (1)Total Power Dissipation: 8.0 W; (2)Collector-base Voltage: 36 V; (3)Collector-emitter Voltage (IB=0): 18 V; (4)Collector Current: 0.64 A; (5)Storage Temperature: -65 to 200℃; (6)Junction Temperature: 200℃.
Features
SD1127 features: (1)Designed for VHF military and commercial equipment; (2)4.0 W(min) with greater than 10 dB gain; (3)Grounded emitter configuration.
Diagrams
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 SD1127 |
Other |
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Data Sheet |
Negotiable |
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