Product Summary
The SI9945DY is an N-Channel Enhancement Mode MOSFET produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The SI9945DY is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. The applications of the SI9945DY include Battery switch, Load switch, Motor controls.
Parametrics
SI9945DY absolute maximum ratings: (1)Drain-source voltage, VDSS: 60V; (2)Gate-source voltage, VGSS: ±20V; (3)Drain current, continuous, ID: 3.3A; pppulsed, IA: 10A; (4)Power dissipation for single operation, PD: 2.0W; (5)Operating and storage temperature range, TJ,TSTG: -55 to 150℃.
Features
SI9945DY features: (1)3.3 A, 60 V. RDS(ON) = 0.100 W @ VGS = 10 V RDS(ON) = 0.200 W @ VGS = 4.5 V; (2)Low gate charge; (3)Fast switching speed; (4)High power and current handling capability.
Diagrams
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![]() SI9945DY |
![]() Fairchild Semiconductor |
![]() MOSFET SO8 DUAL NCH |
![]() Data Sheet |
![]() Negotiable |
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![]() Si9945DY* |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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