Product Summary

The STW18NK80Z zener-protected super mesh power mosfet. The STW18NK80Z is obtained through an extreme optimization of ST well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, specialcare of the STW18NK80Z is taken to ensure a very good dv/dt capavility for the most demanding applications. Applications of the STW18NK80Z include: high current, high speed switching, ideal for off-line power supplies.

Parametrics

STW18NK80Z absolute maximum ratings: (1) Drain-source Voltage (VGS=0) VDS: 800V; (2) Drain-gate Voltage (RGS =20kΩ) VDGR: 800V; (3) Gate-source Voltage VGS: ±30V; (4) Drain Current(continuous)at T =25°C ID=19A; (5) DrainCurrent(continuous) at TC=100μID: 12A; (6) Drain Current(pulsed) IDM: 76A; (7) Total Dissipationat TC=25°C, PTOT: 350W; (8) Derating Factor: 2.4W/°C; (9) Gate source ESD(HBMC=100pF,R=1.5KΩ) : 6000V; (10) Peak Diode Recovery voltage slope dv/dt: 4.5V/ns; (11) Operating Junction Temperature, Storage Temperature Tj, Tstg: -55 to 150°C.

Features

STW18NK80Z features: (1) typical (on) =34Ω; (2) extremely high dv/dt capacity; (3) 100% avalanche tested; (4) gate charge minized; (5) very low intrinsic capaciances; (6) very good manufacturing repeatiblity.

Diagrams

STW18NK80Z Unclamped Inductive Load Test Circuit

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