Product Summary
The stp20nm60 is an N-channel MDmesh power MOSFET. The stp20nm60 is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH horizontal layout. The stp20nm60 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. The application of the stp20nm60 includes switching applications.
Parametrics
stp20nm60 absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 600 V; (2)Gate-source voltage, VGS: ±30 V; (3)Drain current (continuous) at TC = 25℃, ID: 20A; (4)Drain current (continuous) at TC = 100℃, ID: 12.6A; (5)Drain current (pulsed), IDM: 80A; (6)Total dissipation at TC = 25℃, PTOT: 45W; (7)Derating factor: 0.36 W/℃; (8)Peak diode recovery voltage slope, dv/dt: 15 V/ns; (9)Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1s; TC = 25℃), VISO: 2500 V; (10)Storage temperature, Tstg: -65 to 150℃; (11)Max. operating junction temperature, Tj: 150℃.
Features
stp20nm60 features: (1)High dv/dt and avalanche capabilities; (2)100% avalanche tested; (3)Low input capacitance and gate charge; (4)Low gate input resistance.
Diagrams
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![]() STP20NM60 |
![]() STMicroelectronics |
![]() MOSFET N-Ch 600 Volt 20 Amp |
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![]() STP20NM60A |
![]() STMicroelectronics |
![]() MOSFET N-Ch 650 Volt 20 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() STP20NM60FP |
![]() STMicroelectronics |
![]() MOSFET N-Ch 600 Volt 20 Amp |
![]() Data Sheet |
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![]() STP20NM60FD |
![]() STMicroelectronics |
![]() MOSFET N-Ch 600 Volt 20 Amp |
![]() Data Sheet |
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