Product Summary

The stp20nm60 is an N-channel MDmesh power MOSFET. The stp20nm60 is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH horizontal layout. The stp20nm60 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. The application of the stp20nm60 includes switching applications.

Parametrics

stp20nm60 absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 600 V; (2)Gate-source voltage, VGS: ±30 V; (3)Drain current (continuous) at TC = 25℃, ID: 20A; (4)Drain current (continuous) at TC = 100℃, ID: 12.6A; (5)Drain current (pulsed), IDM: 80A; (6)Total dissipation at TC = 25℃, PTOT: 45W; (7)Derating factor: 0.36 W/℃; (8)Peak diode recovery voltage slope, dv/dt: 15 V/ns; (9)Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1s; TC = 25℃), VISO: 2500 V; (10)Storage temperature, Tstg: -65 to 150℃; (11)Max. operating junction temperature, Tj: 150℃.

Features

stp20nm60 features: (1)High dv/dt and avalanche capabilities; (2)100% avalanche tested; (3)Low input capacitance and gate charge; (4)Low gate input resistance.

Diagrams

stp20nm60 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP20NM60
STP20NM60
STMicroelectronics
MOSFET N-Ch 600 Volt 20 Amp
Data Sheet
0-1: $3.40
1-10: $2.83
10-100: $2.49
100-250: $2.14
STP20NM60A
STP20NM60A
STMicroelectronics
MOSFET N-Ch 650 Volt 20 Amp
Data Sheet
Negotiable 
STP20NM60FP
STP20NM60FP
STMicroelectronics
MOSFET N-Ch 600 Volt 20 Amp
Data Sheet
0-1: $3.40
1-10: $2.83
10-100: $2.49
100-250: $2.14
STP20NM60FD
STP20NM60FD
STMicroelectronics
MOSFET N-Ch 600 Volt 20 Amp
Data Sheet
0-1: $3.49
1-10: $2.90
10-100: $2.52
100-250: $2.32