Product Summary

The 11n60c2 is a Cool MOS Power Transistor.

Parametrics

20N60S5 absolute maximum ratings: (1)Continuous drain current ID: 11A at TC=25℃; 7A at TC=100℃; (2)Pulsed drain current ID puls: 22A; (3)Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V EAS: 340 mJ; (4)Avalanche energy repetitive tAR, limited by Tjmax EAR = 0.6 mJ; (5)Avalanche current repetitive, limited by Tjmax IAR: 11 A; (6)Reverse diode dv/dt IS=11A, VDS<VDSS, di/dt=100A/μs, Tjmax=150℃ dv/dt: 6 V/ns; (7)Gate source voltage VGS: ±20 V; (8)Power dissipation TC=25℃ Ptot: 125 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.

Features

11n60c2 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances.

Diagrams

11n60c2 diagram