(China (Mainland))
Product Summary
The BLF888 power transistor for broadcast transmitter applications and industrial applications. The BLF888 iss optimized for digital applications and can deliver 110W average DVB-T broadband over the full UHF band from 470MHz to 860MHz. The excellent ruggedness of the BLF888 makes it ideal for digital transmitter applications.
Parametrics
BLF888 absolute maximum ratings: (1) drain-source voltage VDS: 104V; (2) gate-source voltage VGS: -0.5 to +11V; (3) Storage temperature Tstg: -65 to +150°C; (4) junction temperature Tj: 200°C.
Features
BLF888 features: (1) Excellent ruggedness; (2) High power gain; (3) High effiency; (4) Designed for broadband operation (470 MHz to 860 MHz) ; (5) Excellent reliability; (6) Internal input matching for high gain and optimum broadband operation; (7) Easy power control; (8) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF888 |
NXP Semiconductors |
Transistors RF MOSFET Power 500W, 470-860MHz |
Data Sheet |
Negotiable |
|
||||||
|
BLF888,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR RF PWR LDMOS |
Data Sheet |
|
|
||||||
|
BLF888A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF POWER LDMOS TRANSISTOR |
Data Sheet |
|
|
||||||
 |
BLF888AS,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF POWER LDMOS TRANSISTOR |
Data Sheet |
|
|
||||||
|
BLF888B,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF pwr LDMOS transistor |
Data Sheet |
|
|
||||||
|
BLF888BS,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF pwr LDMOS transistor |
Data Sheet |
|
|
||||||
