Product Summary

The FQPF9N50C is an N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF9N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF9N50C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 500 V; (2)ID, Drain Current - Continuous (TC = 25℃): 9A; Continuous (TC = 100℃): 5.4A; (3)IDM, Drain Current - Pulsed (Note 1): 36A; (4)VGSS, Gate-Source Voltage: ±30 V; (5)EAS, Single Pulsed Avalanche Energy (Note 2): 360 mJ; (6)IAR, Avalanche Current (Note 1): 9 A; (7)EAR, Repetitive Avalanche Energy (Note 1): 13.5 mJ; (8)dv/dt, Peak Diode Recovery dv/dt (Note 3): 4.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 44 W; Derate above 25℃: 0.35 W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.

Features

FQPF9N50C features: (1)9 A, 500V, RDS(on) = 0.8 Ω@VGS = 10 V; (2)Low gate charge (typical 28 nC); (3)Low Crss (typical 24 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQPF9N50C block diagram

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(USD)		 Quantity
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