Product Summary
The HFA06TB120PBF is a state of the art ultra fast recovery diode. Employing the lastest in epitaxial construction and advanced processing techniques it features a superb combination of characterisitics which result in performance which is ubsurpassed by any rectifier previously available. With basic ratings of 1200 Volts and 6 amps continuous current, the HFA06TB120PBF is especially well suited for use as the companion diode for IGBTs and MOSFETs.
Parametrics
HFA06TB120PBF absolute maximum ratings: (1)Cathode-to-anode voltage, vr: 1200v; (2)Continuous forward current, if@tc=100℃: 8a; (3)Single pulse forward current, ifsm: 80a; (4)Maximum repetitive forward current, ifrm: 24a; (5)Maximum power dissipation, pd@tc=25℃: 62.5w; (6)Maximum power dissipation, pd@tc=100℃: 25w; (7)Operating junction and storage temperature range, tj,tstg: -55 to 150℃.
Features
HFA06TB120PBF features: (1)Ultrafast recovery; (2)Ultrasoft recovery; (3)Very low IRRM; (4)Very low Qrr; (5)Specified at operating conditions; (6)Lead-free.
Diagrams
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![]() DIODE HEXFRED 1200V 6A TO220AC |
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![]() HFA04SD60S |
![]() Vishay Semiconductors |
![]() Rectifiers 600 Volt 4.0 Amp |
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![]() HFA04SD60SPbF |
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![]() HFA04SD60STRL |
![]() Vishay Semiconductors |
![]() Rectifiers 600 Volt 4.0 Amp |
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![]() HFA04SD60STRR |
![]() Vishay Semiconductors |
![]() Rectifiers 600 Volt 4.0 Amp |
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![]() HFA04TB60 |
![]() Vishay Semiconductors |
![]() Rectifiers 600 Volt 4.0 Amp |
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![]() Negotiable |
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![]() HFA04TB60PBF |
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![]() DIODE HEXFRED 600V 4A TO220AC |
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