Product Summary

The HN58V66AFP-10 is a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. The HN58V66AFP-10 has realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology. The device also has a 64-byte page programming function to make their write operations faster.

Parametrics

HN58V66AFP-10 absolute maximum ratings: (1)Power supply voltage relative to VSS, VCC: -0.6 to +7.0 V; (2)Input voltage relative to VSS, Vin: -0.5 to +7.0 V; (3)Operating temperature range, Topr: 0 to +70℃; (4)Storage temperature range, Tstg: -55 to +125℃.

Features

HN58V66AFP-10 features: (1)Single supply: 2.7 to 5.5 V; (2)Access time: 100 ns (max) at 2.7 V = VCC < 4.5 V; 70 ns (max) at 4.5 V = VCC = 5.5 V; (3)Power dissipation; (4)Active: 20 mW/MHz (typ); (5)Standby: 110μW (max); (6)On-chip latches: address, data, CE, OE, WE; (7)Automatic byte write: 10 ms (max); (8)Automatic page write (64 bytes): 10 ms (max); (9)Ready/Busy; (10)Data polling and Toggle bit; (11)Data protection circuit on power on/off; (12)Conforms to JEDEC byte-wide standard; (13)Reliable CMOS with MNOS cell technology.

Diagrams

HN58V66AFP-10 block diagram