IRF630

IRF630, N-channel TrenchMOS transistor, TO, 200V, 9A, International Rectifier

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Price:: US $0.12~0.15 / piece [Get Latest Price]

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51 ~ 100 :	0.14 / Piece
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PartNumber:: IRF630

Brand:: International Rectifier - IR | Pack: TO | D/C: 07+

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Products Upload time: 2012-12-22

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Part Number:IRF630
US $0.12 - 0.15
IRF630NSPBF IRF630S IRF630PBF

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Product Summary

The IRF630 is an N-Channel enhancement mode silicon gate power field effect transistor. It is advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17412.

Parametrics

IRF630 absolute maximum ratings: (1)Drain to Source Voltage, VDSS: 200V; (2)Drain to Gate Voltage (RGS = 20kW), VDGR: 200V ; (3)Continuous Drain Current, ID: 9A; (4)TC = 100℃, ID: 6A; (5)Pulsed Drain Current, IDM: 36A; (6)Gate to Source Voltage, VGS: ±20V; (7)Maximum Power Dissipation, PD: 75W; (8)Linear Derating Factor: 0.6W/℃; (9)Single Pulse Avalanche Energy Rating, EAS: 150mJ; (10)Operating and Storage Temperature, TJ, TSTG: -55 to 150℃; (11)Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s, Tl: 300℃; (12)Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s, Tpkg: 260℃.

Features

IRF630 features: (1)9A, 200V; (2)r DS(ON) = 0.400W; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature: TB334, Guidelines for Soldering Surface Mount Components to PC Boards.