(China (Mainland))
Product Summary
The ISL9N312AD3st is a 30V N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET. It employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, the ISL9N312AD3st improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. The application of it is DC/DC converters.
Parametrics
ISL9N312AD3st absolute maximum ratings: (1)Drain to Source Voltage:30 V; (2)Gate to Source Voltage:± 20 V; (3)Drain Current: Continuous (TC = 25℃, VGS = 10V):50A, Continuous (TC = 100℃, VGS = 4.5V):32 A, Continuous (TC = 25℃, VGS = 10V, RθJA = 52℃/W):11 A; (4)Power dissipation:75W, Derate above 25℃:0.5W/℃; (5)Operating and Storage Temperature:-55℃ to 175℃.
Features
ISL9N312AD3st features: (1)Fast switching; (2)rDS(ON) = 0.010Ω (Typ), VGS = 10V; (3)rDS(ON) = 0.017Ω (Typ), VGS = 4.5V; (4)Qg (Typ) = 13nC, VGS = 5V; (5)Qgd (Typ) = 4.5nC; (6)CISS (Typ) = 1450pF.
Diagrams
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 ISL9N312AD3ST |
Fairchild Semiconductor |
MOSFET N-Ch LL UltraFET PWM Optimized |
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Negotiable |
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ISL9000 |
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ISL9000A |
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ISL9000AIRBBZ |
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IC REG LDO 1.5V .3A 10-DFN |
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ISL9000AIRBBZ-T |
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IC REG LDO 1.5V .3A 10-DFN |
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ISL9000AIRBCZ |
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IC REG LDO 1.5V/1.8V .3A 10-DFN |
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ISL9000AIRBCZ-T |
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IC REG LDO 1.5V/1.8V .3A 10-DFN |
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