Product Summary

The LM6361N high-speed amplifier exhibits an excellent speed-power product in delivering 300V/μs and 50MHz unity gain stability with only 5mA of supply current. The LM6361N is built with National VIP process which provides fast PNP transistor that is true complement to the alrady fast NPN devices. The applications of the LM6361N include: Video amplifier, High frequency filter, Wide-band width signalconditioning, Radar and Sonar.

Parametrics

LM6361N absolute maximum ratings: (1) Supply Voltage (V+ - V-) : 36V; (2) Differential Input Voltage: ±8V; (3) Common-Mode Voltage Range (V+ - -0.7V) to (V- +0.7V) ; (4) Output Short Circuit to GND: Continuous; (5) Soldering Information Dual-In-LinePackage(N,J) Soldering(10sec.) : 260°C; (6) Storage Temp Range: -65 to +150°C; (7)Max Junction Temperature: 150°C; (8) ESD Tolerance: ±700V.

Features

LM6361N features: (1) High slew rate 300V/μs; (2) High unity gain freq 50MHz; (3) Low supply current 5mA; (4) Fast settling 120ns to 0.1 %; (5) Low differential gain <0.1% ; (6) Wide supply range 4.75V to 32V; (7) Stabl with unlimited capacitive load; (8) Well behaved; easy to apply.

Diagrams

LM6361N Connection Diagram