(China (Mainland))
Product Summary
The M28F220-80M3 is a flash memory. The M28F220-80M3 is a non-volatile memory which may be erased electrically at the chip level and programmed byte-to-byte. It is organised as 32K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F220-80M3 is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 100ns makes the device suitable for use in high speed microprocessor systems.
Parametrics
M28F220-80M3 absolute maximum ratings: (1)Ambient operating temperature, TA: -40 to 125℃; (2)Storage temperature, Tstg: -65 to 150℃; (3)Input or output voltage, VIO: -0.6 to 7V; (4)Supply voltage, VCC: -0.6 to 7V; (5)A9 voltage, VA9: -0.6 to 13.5V; (6)Program supply voltage, during erase or programming, VPP: -0.6 to 14V.
Features
M28F220-80M3 features: (1)Fast access time: 90ns; (2)Low power consumption, standby current: 100μA max; (3)10,000 erase/program cycles; (4)12V programming voltage; (5)Typical byte programming time 10μs (presto F algorithim); (6)Electrical chip erase in 1s range; (7)Integrated erase/program stop timer; (8)Extended temperature ranges.
Diagrams
