Product Summary

The MRF7S15100HR3 is an N-channel enhancement -mode lateral MOSFET which is designed for CDMA base station applications with frequencies from 1470 to 1510 MHz for TDMA, CDMA and multicarrier amplifier applications. The MRF7S15100HR3 is used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

Parametrics

MRF7S15100HR3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS :-6.0, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150℃; (6)Operating Junction Temperature (1): 225 ℃.

Features

MRF7S15100HR3 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C; (6)Operation; (7)Optimized for Doherty Applications; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF7S15100HR3 test circuit diagram

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