(China (Mainland))
Product Summary
The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. The NE32584C is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.
Parametrics
NE32584C absolute maximum ratings: (1)VDS, Drain to Source Voltage: 4.0V; (2)VGS, Gate to Source Voltage: -3.0V; (3)IDS, Drain Current: IDSSmA; (4)IGRF, Gate Current: 100mA; (5)TCH, Channel Temperature: 150℃; (6)TSTG, Storage Temperature: -65 to +150℃; (7)PT, Total Power Dissipation: 165mW.
Features
NE32584C features: (1)Very low noise figure: 0.45 dB Typical at 12 GHz; (2)High associated gain: 12.5 dB Typical at 12 GHz; (3)LG ≤0.20 mm, WG = 200 mm; (4)Low cost metal ceramic package; (5)Tape & reel packaging option available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 NE32584C |
Other |
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Data Sheet |
Negotiable |
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NE32584C-S |
NEC/CEL |
Transistors RF GaAs 84C LO NO HJ FET |
Data Sheet |
Negotiable |
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