Product Summary

The RJP30E2 is a Silicon N Channel IGBT High Speed Power Switching.

Parametrics

RJP30E2 absolute maximum ratings: (1)Colllector to emitter voltage, VCES: 360V; (2)Gate to emitter voltage, VGES: ±30V; (3)Collector current, IC: 35A; (4)Collector peak current, IC(peak): 200A; (5)Collector dissipation, PC: 50W; (6)Junction to case thermal impedance, θJ-C: 2.5℃/W; (7)Junction temperature, Tj: 150℃; (8)Storage temperature, Tstg: -55 to 150℃.

Features

RJP30E2 features: (1)Trench gate technology (G5H series); (2)Low collector to emitter saturation voltage, VCE(sat) = 1.7 V typ; (3)High speed switching tf = 150 ns typ; (4)Low leak current, ICES = 1 μA max.

Diagrams

RJP30E2 block diagram