Product Summary
The SI9910DJ Power MOSFET driver provides optimized gate drive signals, protection circuitry and logic level interface. Very low quiescent current is provided by a CMOS buffer and a high-current emitter-follower output stage. The SI9910DJ is available in both standard and lead (Pb)-free 8-pin plastic DIP and SOIC packages which are specified to operate over the industrial temperature range of -40℃ to 85℃.
Parametrics
SI9910DJ absolute maximum ratings: (1)VDD Supply Range:-0.3 V to 18 V; (2)Pin 1, 4, 5, 7, 8:-0.3 V to VDD + 0.3 V; (3)Pin 2:-0.7 V to VDD + 0.3 V; (4)Input Current:±20 mA; (5)Peak Current (Ipk):1 A; (6)Storage Temperature:-65 to 150℃; (7)Operating Temperature:-40 to 85℃; (8)Junction Temperature (TJ):150℃.
Features
SI9910DJ features: (1)dv/dt and di/dt Control; (2)Undervoltage Protection; (3)Short-Circuit Protection; (4)trr Shoot-Through Current Limiting; (5)Low Quiescent Current; (6)CMOS Compatible Inputs; (7)Compatible with Wide Range of MOSFET Devices; (8)Bootstrap and Charge Pump Compatible(High-Side Drive).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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SI9910DJ |
Vishay/Siliconix |
Power Driver ICs MOSFET Driver |
Data Sheet |
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SI9910DJ-E3 |
Vishay/Siliconix |
Power Driver ICs MOSFET Driver |
Data Sheet |
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