Product Summary

The STB55NF06L is the latest development of STMicroelectronics unique Single Feature size strip-based process size. The resulting transistor of the STB55NF06Lshows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications of the STB55NF06L include: HIGH CURRENT, HIGH SPEED SWITCHING, MOTOR CONTROL, AUDIO AMPLIFIERS, DC-DC and DC-AC CONVERTERS, AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) .

Parametrics

STB55NF06L absolute maximum ratings: (1) Drain-source Voltage (VGS=0) VDS: 60V; (2) Drain-gate Voltage (RGS=20kΩ) VGS: ±16V ; (3) Drain Current (continuous) at T C=25°C ID: 55A; (4) Drain Current (continuous) at TC=100°C, ID=39A; (5) Drain Current (pulsed) IDM: 220A; (6) Total Dissipation at T = 25, PTOT: 95W; (7) Derating Factor: 0.63°C/W; (8) Peak Diode Recovery voltage slope, dv/dt: 20V/ns; (9) Single Pulse Avalanche Energy: 300mJ; (10) Insulation Withstand Voltage (DC) VISO: 2500V; (11) Storage TemperatureTstg: -55 to 175°C.

Features

STB55NF06L features: (1) typical RDS (on ) =0.014Ω; (2) expectional dv.dt capacity; (3) application oriented characterization.

Diagrams

STB55NF06L Unclamped Inductive Load Test Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STB55NF06L
STB55NF06L
Other

Data Sheet
Negotiable 
STB55NF06L-1
STB55NF06L-1
Other

Data Sheet
Negotiable 
STB55NF06LT4
STB55NF06LT4
STMicroelectronics
MOSFET N-Ch 60 Volt 55 Amp
Data Sheet
0-1: $1.31
1-10: $1.03
10-100: $0.91
100-250: $0.82