(China (Mainland))
Product Summary
The STW25NM60 is an N-channel MDmesh MOSFET. The STW25NM60 is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. The applications of the STW25NM60 include increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
Parametrics
STW25NM60 absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 600 V; (2)VDGR, Drain-gate Voltage (RGS = 20 kΩ): 600 V; (3)VGS, Gate- source Voltage: ± 25 V; (4)ID, Drain Current (continuous) at TC = 25℃: 20A; (5)ID, Drain Current (continuous) at TC = 100℃: 12.8A; (6)IDM, Drain Current (pulsed): 80A; (7)PTOT, Total Dissipation at TC = 25℃: 160W; (8)Derating Factor 1.28W/℃; (9)dv/dt, (2) Peak Diode Recovery voltage slope: TBD V/ns; (10)Tstg, Storage Temperature: -55 to 150℃; (11)Tj Max., Operating Junction Temperature: 150℃.
Features
STW25NM60 features: (1)world’s lowest on resistance; (2)typical rds(on) = 0.140Ω; (3)high dv/dt and avalanche capabilities; (4)100% avalanche tested; (5)low input capacitance and gate charge; (6)low gate input resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 STW25NM60N |
STMicroelectronics |
MOSFET N-Ch 600 V 0.14 Ohm 20 A 2nd Gen MDmesh |
Data Sheet |
Negotiable |
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STW25NM60ND |
STMicroelectronics |
MOSFET N-channel 600V, 21A FDMesh II |
Data Sheet |
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