(China (Mainland))
Product Summary
The FQA19N20C is an N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA19N20C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQA19N20C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 200 V; (2)ID Drain Current - Continuous (TC = 25℃): 21.8 A; Continuous (TC = 100℃): 13.8 A; (3)IDM, Drain Current - Pulsed (Note 1): 87.2 A; (4)VGSS, Gate-Source Voltage: ±30 V; (5)EAS, Single Pulsed Avalanche Energy (Note 2): 433 mJ; (6)IAR, Avalanche Current (Note 1): 21.8 A; (7)EAR, Repetitive Avalanche Energy (Note 1): 18 mJ; (8)dv/dt, Peak Diode Recovery dv/dt (Note 3): 5.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 180 W; Derate above 25℃: 1.45 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQA19N20C features: (1)21.8A, 200V, RDS(on) = 0.17Ω@VGS = 10 V; (2)Low gate charge ( typical 40.5 nC); (3)Low Crss ( typical 85 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FQA19N20C |
Fairchild Semiconductor |
MOSFET 200V N-Channel Advance Q-FET |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FQA10N60C |
Fairchild Semiconductor |
MOSFET N-CH/600V/10A/QFET |
Data Sheet |
Negotiable |
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FQA10N80 |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
Negotiable |
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FQA10N80_F109 |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
Negotiable |
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FQA10N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch advance QFET |
Data Sheet |
Negotiable |
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FQA10N80C_F109 |
Fairchild Semiconductor |
MOSFET 800V N-Ch QFET Advance |
Data Sheet |
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FQA11N40 |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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